Samsung HBM3E memory delivers 1.2 TB/s bandwidth per stack with capacities up to 36GB. Built on Samsung's advanced fabrication technology, it powers the latest AI accelerators from leading vendors. Features include advanced thermal management and industry-leading power efficiency.

Key Features

1.2 TB/s Bandwidth
36GB per Stack
Advanced Thermal Management
Low Power
12-Hi Stack Support

Ideal Use Cases

ai traininghpc

Memory Specifications

Complete technical specifications for the HBM3E.

Type

Type: HBM3E

Capacity

Capacity: 36GB per stack

Performance

Speed: 9.8 Gbps
Bandwidth: 1.2 TB/s per stack

Physical

Form Factor: 8-Hi / 12-Hi Stack
Voltage: 1.1V

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