High-bandwidth memory — HBM3E from SK hynix, Samsung, Micron. DDR5 RDIMM, MRDIMM, CXL modules.
Industry-leading HBM3E memory with 1.18 TB/s bandwidth per stack for AI accelerators.
Samsung HBM3E with 1.2 TB/s bandwidth for next-generation AI processors.
Enterprise DDR5 RDIMM for server platforms with up to 5600 Mbps speed.
Micron HBM3E with industry-leading 1.2+ TB/s bandwidth for AI and HPC.
Enterprise DDR5 RDIMM for next-generation server platforms.
Next-generation multiplexed rank DIMM for 8800+ MT/s server memory performance.
CXL-attached memory module for memory expansion beyond traditional DIMM slots.